为了形成带宽窄、品质因数Q高、选择性好的同轴布喇格反射器，提出一种倒圆锥型双重正弦同轴结构设计。基于耦合模式理论，在普通正弦槽结构的基础上，叠加刻蚀周期较小的辅助正弦分布，在导体内外壁上增加倒锥度，形成倒圆锥型双重正弦同轴布喇格结构。通过FORTRAN软件仿真得出，与普通正弦槽相比，倒圆锥型双重正弦同轴布喇格结构的工作模式和竞争模式的带宽更窄，品质因数Q得到提高，残余旁瓣现象得到抑制。同时，竞争模式的中心谐振频率点远离工作模式，带隙重叠进一步分离，频率选择性得到提高。该结构设计简单，方法合理，可以更好地分离工作模式和竞争模式，构建高品质因数Q、高功率的单一高次模谐振腔。

This paper introduces the recent progress in methodologies and their related applications based on the soft x-ray interference lithography beamline in the Shanghai synchrotron radiation facility. Dual-beam, multibeam interference lithography and Talbot lithography have been adopted as basic methods in the beamline. To improve the experimental performance, a precise real-time vibration evaluation system has been established; and the lithography stability has been greatly improved. In order to meet the demands for higher resolution and practical application, novel experimental methods have been developed, such as high-order diffraction interference exposure, high-aspect-ratio and large-area stitching exposure, and parallel direct writing achromatic Talbot lithography. As of now, a 25 nm half-pitch pattern has been obtained; and a cm2 exposure area has been achieved in practical samples. The above methods have been applied to extreme ultraviolet photoresist evaluation, photonic crystal and surface plasmonic effect research, and so on.

设计了一种太赫兹波段的雪花状双宽带极化无关超材料吸波体。采用时域有限元积分的方法对结构单元的电磁特性进行计算，结果表明结构单元在0.9～1.2 THz 之间出现了两个吸收带，吸收率90%以上的频带分别是0.9642～1.002 THz 和1.096～1.1316 THz，带宽分别为37.8 GHz 和35.6 GHz；通过对其表面电流分布进行分析，发现其双宽带吸收特性是由不同的谐振频率叠加产生的；通过对结构单元在不同级对称性破缺下的吸收特性进行计算分析，发现结构单元的双宽带吸收特性对对称性破缺不敏感。